Invited Speakers

         Invited Speaker

Marcus Müller(Otto-von-Guericke-Universität, Germany) -- Direct nanoscale cathodoluminescence imaging of individual GaN/AlN quantum dots

Julien Brault (CRHEA, France) -- UV light emitting diodes using self-assembled (Al,Ga)N quantum dots

G.Cassabois (University of Montpellier, France) -- Probing phonon-assisted optical transitions in hexagonal boron nitride

Xiaohang Li(KAUST, Saudi Arabia) -- AlGaN Deep UV Lasers on Sapphire Substrates Grown by MOCVD

Qixin Guo(Saga University, Japan) -- Growth and characterization of (AlGa) 2O3 films

Yue Hao (Xidian University, China) -- The material technology of GaN based violet LED

Kazuhiko Hara (Shizuoka University, Japan) -- Low-pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a Sapphire Substrate and its Deep UV Emission Band

Motoaki Iwaya (Meijo University, Japan) -- Realization of high performance AlGaN-based UV-detectors and emitters

Debdeep Jena (Cornell University, USA) -- Challenges in taking Deep-UV Nitride LEDs to Electrically Injected Lasers

Valentin Jmerik (Ioffe, Russia) -- Plasma-assisted MBE of AlGaN heterostructures for mid-UV photo- and optoelectronics

Hongxing Jiang (Texas Tech University, USA) -- H-BN epilayers - growth, properties, and applications

Mitsuru Funato(Kyoto University, Japan) -- Unveiling the carrier recombination paths in high Al content AlGaN quantum wells

Sven Einfeldt (FBH Berlin, Germany) -- Overcoming performance limits of current UVB and UVC

Haochung Kuo (National Chiao-Tung University) -- High Efficiency GaN-based 310 nm Filp-chip Deep Ultraviolet Light Emitting Diode with High Reflectance Distributed Bragg Reflector

Xin Li (Georgia Tech – CNRS, France) -- Single phase BAlN with high boron content grown by metalorganic vapor phase epitaxy

Imura Masataka (NIMS, Japan) -- Structural Property of Boron-doped AlN grown by Metal-Organic Vapor Phase Epitaxy

Sophie Meuret (NRS-UMR, France) -- Time-correlated Cathodoluminescence for UV-Material

Hideto Miyake (Mie University, Japan) -- Reparation of high-quality AlN on sapphire by high-temperature annealing

Takayuki Nakano (Shizuoka University, Japan) -- Proposal and development of novel neutron semiconductor detector using BGaN

C. Pernot (Nikkiso Giken Co., Ltd, Japan) -- Status of DUV-LED on Sapphire and their Applications

Rong Zhang (Nanjing University, China) -- TBD

Jong Kyu Kim (POSTECH, Korea) -- Elegant routes to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes

 

 

 

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Support by: Wei Cheng